ATF-55143 データシートの表示（PDF） - HP => Agilent Technologies
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ATF-55143
HP => Agilent Technologies
ATF-55143 Datasheet PDF : 22 Pages
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ATF-55143 Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Parameter and Test Condition
Units
Vgs
Operational Gate Voltage
Vds = 2.7V, Ids = 10 mA
Vth
Threshold Voltage
Vds = 2.7V, Ids = 2 mA
Idss
Saturated Drain Current
Vds = 2.7V, Vgs = 0V
Gm
Transconductance
Vds = 2.7V, gm = ∆Idss/ ∆Vgs;
∆Vgs = 0.75 – 0.7 = 0.05V
Igss
Gate Leakage Current
Vgd = Vgs = -2.7V
NF
Noise Figure[1]
f = 2 GHz Vds = 2.7V, Ids = 10 mA
f = 900 MHz Vds = 2.7V, Ids = 10 mA
Ga
Associated Gain [1]
f = 2 GHz Vds = 2.7V, Ids = 10 mA
f = 900 MHz Vds = 2.7V, Ids = 10 mA
OIP3
Output 3rd Order
f = 2 GHz Vds = 2.7V, Ids = 10 mA
Intercept Point [1]
f = 900 MHz Vds = 2.7V, Ids = 10 mA
P1dB
1dB Compressed
Output Power[1]
f = 2 GHz
f = 900 MHz
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Notes:
1. Measurements obtained using production test board described in Figure 5.
2. Typical values determined from a sample size of 500 parts from 6 wafers.
V
V
µA
mmho
µA
dB
dB
dB
dB
dBm
dBm
dBm
dBm
Min.
0.3
0.18
—
110
—
—
—
15.5
—
22.0
—
—
—
Typ.[2]
0.47
0.37
0.1
220
—
0.6
0.3
17.7
21.6
24.2
22.3
14.4
14.2
Max.
0.65
0.53
3
285
95
0.9
—
18.5
—
—
—
—
—
Input
50 Ohm
Input
Output
50 Ohm
Output
Transmission
Matching Circuit
Matching Circuit
Transmission
Line Including
Γ_mag = 0.4
DUT
Γ_mag = 0.5
Line Including
Gate Bias T
Γ_ang = 83°
Γ_ang = -26°
Drain Bias T
(0.3 dB loss)
(0.3 dB loss)
(1.2 dB loss)
(0.3 dB loss)
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, OIP3, and IIP3 measurements. This circuit
represents a trade-off between an optimal noise match, maximum OIP3 match and associated impedance matching circuit losses. Circuit losses
have been de-embedded from actual measurements.
3
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