ATF-55143 データシートの表示（PDF） - HP => Agilent Technologies
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ATF-55143
HP => Agilent Technologies
ATF-55143 Datasheet PDF : 22 Pages
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ATF-55143 Typical Performance Curves, continued
17
16
15
14
13
12
2V
11
2.7V
3V
10
0 5 10 15 20 25 30 35
Idsq (mA)
Figure 15. P1dB vs. Idsq and Vds at 2 GHz.[1,2]
25
24
23
22
21
20
2V
19
2.7V
3V
18
0 5 10 15 20 25 30 35 40
Ids (mA)
Figure 16. Gain vs. Ids and Vds at 900 MHz.[1]
0.35
0.30
0.25
0.20
0.15
2V
2.7V
3V
0.10
0 5 10 15 20 25 30 35
Ids (mA)
Figure 17. Fmin vs. Ids and Vds at 900 MHz.
32
30
28
26
24
22
20
2V
2.7V
18
3V
16
0 5 10 15 20 25 30 35
Ids (mA)
Figure 18. OIP3 vs. Ids and Vds at 900 MHz.[1]
7
6
5
4
3
2
1
0
2V
-1
2.7V
3V
-2
0 5 10 15 20 25 30 35
Ids (mA)
Figure 19. IIP3 vs. Ids and Vds at 900 MHz.[1]
17
16
15
14
13
12
11
2V
2.7V
10
3V
9
0 5 10 15 20 25 30 35
Idsq (mA)
Figure 20. P1dB vs. Idsq and Vds at
900 MHz.[1,2]
Notes:
1. Measurements at 2 GHz were made on a
fixed tuned production test board that was
tuned for optimal OIP3 match with reasonable
noise figure at 2.7 V, 10 mA bias. This circuit
represents a trade-off between optimal noise
match, maximum OIP3 match and a realizable
match based on production test board
requirements. Measurements taken above
and below 2 GHz were made using a double
stub tuner at the input tuned for low noise
and a double stub tuner at the output tuned
for maximum OIP3. Circuit losses have been
de-embedded from actual measurements.
2. P1dB measurements are performed with
passive biasing. Quiescent drain current, Idsq,
is set with zero RF drive applied. As P1dB is
approached, the drain current may increase or
decrease depending on frequency and dc bias
point. At lower values of Idsq, the device is
running close to class B as power output
approaches P1dB. This results in higher P1dB
and higher PAE (power added efficiency)
when compared to a device that is driven by a
constant current source as is typically done
with active biasing. As an example, at a VDS =
2.7V and Idsq = 5 mA, Id increases to 15 mA as
a P1dB of +14.5 dBm is approached.
5
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