Features
• Frequency Range 2.4 GHz to 2.5 GHz
• Supply Voltage 2.7V to 3.6V
• 32 dB Power Gain
• 23 dBm Linear Output Power for IEEE 802.11b Mode Operation
• EVM < 2.0% at 19 dBm Output Power for IEEE 802.11g Mode Operation
• On-chip Power Detector with 20 dB Dynamic Range
• Power-down Mode and Biasing Control
• Input and Interstage Matching Fully On-chip
• Low Profile Lead-free Plastic Package QFN16 (3 × 3 × 0.9 mm)
Applications
• IEEE 802.11b DSSS WLAN
• IEEE 802.11g OFDM WLAN
• PC Cards, PCMCIA, Access Points
• 2.4 GHz ISM Band Application
1. Description
This power amplifier (PA) is designed for high-performance 802.11b and 802.11g
multi-mode applications such as Mini PCI and PCMCIA for portable devices and
access points. The low profile plastic package with internal input matching to 50Ω and
on-chip interstage matching minimizes the PCB board-space and allows simplified
integration with very few passive components. The on-chip power detector provides a
voltage linear to the output power, while the standby/bias control logic provides
power-saving and shutdown options. The PA is realized as a three stage PA with
internal interstage matching and an open-collector output structure.
The power amplifier is designed using Atmel’s Silicon-Germanium (SiGe2) process
and provides excellent linearity and noise performance, high gain, and good power-
added efficiency.
High Gain
Power Amplifier
for 802.11b/g
WLAN Systems
ATR7032
Preliminary
Rev. 4846B–WLAN–04/05