ATTL7581AC データシートの表示（PDF） - Agere -> LSI Corporation

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ATTL7581AC

Ringing Access Switch

Agere -> LSI Corporation 

Data Sheet

November 1999

L7581 Ringing Access Switch

Pin Information (continued)

Table 1. Pin Descriptions

DIP SOG

11

24

32

43

56

67

75

88

Symbol

FGND

NC

TBAT

TLINE

TRINGING

VDD

NC

TSD

Description

Fault ground.

DIP SOG

16 16

No connection.

Connect to TIP on SLIC side.

Connect to TIP on line side.

Connect to return ground for

ringing generator.

5 V supply.

15 13

14 15

13 14

12 12

11 11

No connection.

10 10

Temperature shutdown pin. Can 9 9

be used as a logic level input or

output. See Table 12, Truth

Table, and the Switching Behav-

ior section of this data sheet for

input pin description. As an out-

put, will read 5 V when device is

in its operational mode and 0 V

in the thermal shutdown mode.

In the L7581, the thermal shut-

down mechanism cannot be dis-

abled.

Symbol

VBAT

NC

RBAT

RLINE

RRINGING

LATCH

INPUT

DGND

Description

Battery voltage. Used as a ref-

erence for protection circuit.

No connection.

Connect to RING on SLIC side.

Connect to RING on line side.

Connect to ringing generator.

Data latch control, active-high,

transparent low.

Logic level input switch control.

Digital ground.

Absolute Maximum Ratings

Handling Precautions

Stresses in excess of the absolute maximum ratings

can cause permanent damage to the device. These are

absolute stress ratings only. Functional operation of the

device is not implied at these or any other conditions in

excess of those given in the operational sections of the

data sheet. Exposure to absolute maximum ratings for

extended periods can adversely affect device reliability.

Table 2. Absolute Maximum Ratings Parameters

Parameter

Min Max Unit

Operating Temperature Range –40 110 °C

Storage Temperature Range –40 150 °C

Relative Humidity Range

5 95 %

Pin Soldering Temperature

— 10 °C

5 V Power Supply

—7

V

Battery Supply

— –85 V

Logic Input Voltage

—7

V

Input-to-output Isolation

— 330 V

Pole-to-pole Isolation

— 330 V

Although protection circuitry has been designed into

this device, proper precautions should be taken to

avoid exposure to electrostatic discharge (ESD) during

handling and mounting. Lucent Technologies Micro-

electronics Group employs a human-body model

(HBM) and a charged-device model (CDM) for ESD-

susceptibility testing and protection design evaluation.

ESD voltage thresholds are dependent on the circuit

parameters used to define the model. No industry-wide

standard has been adopted for CDM. However, a stan-

dard HBM (resistance = 1500 Ω, capacitance = 100 pF)

is widely used and therefore can be used for compari-

son purposes. The HBM ESD threshold presented

here was obtained by using these circuit parameters.

Table 3. HBM ESD Threshold Voltage

Device

L7581

Rating

1000 V

Lucent Technologies Inc.

3

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