BA892E6433 データシートの表示（PDF） - Infineon Technologies

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BA892E6433

Silicon RF Switching Diode

Infineon Technologies 

BA592/BA892...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

AC Characteristics

Diode capacitance

VR = 1 V, f = 1 MHz

VR = 3 V, f = 1 MHz

VR = 0 V, f = 100 MHz

CT

pF

0.65 0.92 1.4

0.6 0.85 1.1

-

1

-

Reverse parallel resistance

RP

VR = 0 V, f = 100 MHz

Forward resistance

rf

IF = 3 mA, f = 100 MHz

IF = 10 mA, f = 100 MHz

Charge carrier life time

τ rr

IF = 10 mA, IR = 6 mA, measured at IR = 3mA,

RL = 100 Ω

-

100

- kΩ

Ω

- 0.45 0.7

- 0.36 0.5

- 120 - ns

I-region width

Insertion loss1)

IF = 0.1 mA, f = 1.8 GHz

IF = 3 mA, f = 1.8 GHz

IF = 10 mA, f = 1.8 GHz

Isolation1)

VR = 0 V, f = 100 MHz

VR = 0 V, f = 470 MHz

VR = 0 V, f = 1 GHz

WI

-

3

- µm

IL

dB

-

0.1

-

-

0.5

-

-

0.4

-

ISO

- 23.5 -

- 10.5 -

-

5.5

-

1BA892-02L in series configuration, Z = 50Ω

3

2011-07-21

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