BAP50LX(2007) データシートの表示（PDF） - NXP Semiconductors.

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BAP50LX
(Rev.:2007)

Silicon PIN diode

NXP Semiconductors. 

NXP Semiconductors

BAP50LX

Silicon PIN diode

4. Marking

Table 3. Marking

Type number

BAP50LX

Marking code

LB

5. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

VR

reverse voltage

continuous

-

50

V

IF

forward current

continuous

-

50

mA

Ptot

total power dissipation

Tsp = 90 °C

-

150

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−65

+150

°C

6. Thermal characteristics

Table 5.

Symbol

Rth(j-sp)

Thermal characteristics

Parameter

thermal resistance from junction

to solder point

Conditions

Typ

Unit

53

K/W

7. Characteristics

Table 6. Characteristics

Tamb = 25 °C unless otherwise specified.

Symbol Parameter

Conditions

VF

forward voltage

IF = 50 mA

VR

reverse voltage

IR = 10 µA

IR

reverse current

VR = 50 V

Cd

diode capacitance

see Figure 1; f = 1 MHz;

VR = 0 V

VR = 1 V

VR = 5 V

rD

diode forward resistance see Figure 2; f = 100 MHz;

IF = 0.5 mA

IF = 1 mA

IF = 10 mA

ISL

isolation

see Figure 3; VR = 0 V;

f = 900 MHz

f = 1800 MHz

f = 2450 MHz

BAP50LX_1

Product data sheet

Rev. 01 — 17 July 2007

Min Typ Max Unit

-

0.95 1.1

V

50

-

-

V

-

-

100 nA

-

0.40 -

pF

-

0.28 0.55 pF

-

0.19 0.35 pF

-

26

40

Ω

-

14

25

Ω

-

3

5

Ω

-

20.3 -

dB

-

17.9 -

dB

-

16.5 -

dB

© NXP B.V. 2007. All rights reserved.

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