BAS16-V データシートの表示（PDF） - Vishay Semiconductors
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BAS16-V Datasheet PDF : 4 Pages
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BAS16-V
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Junction ambient
On ceramic substrate
8 mm x 10 mm x 0.7 mm
Junction and storage
temperature range
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
IF = 1 mA
Forward voltage
IF = 10 mA
IF = 50 mA
IF = 150 mA
VR = 75 V
Reverse current
VR = 75 V, Tj = 150 °C
VR = 25 V, Tj = 150 °C
Diode capacitance
VR = 0, f = 1 MHz
Reverse recovery time
IF = 10 mA to IR = 1 mA,
VR = 6 V, RL = 100 Ω
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
1000
100
Tj = 100 °C
10
1
25 °C
0.1
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
14356
VF - Forward Voltage (V)
Figure 1. Forward Current vs. Forward Voltage
Symbol
Value
Unit
RthJA
357
K/W
Tj = Tstg
- 55 to + 150
°C
Symbol
Min.
Typ.
Max.
Unit
VF
715
mV
VF
855
mV
VF
1
V
VF
1.25
V
IR
1
µA
IR
50
µA
IR
30
µA
CD
4
pF
trr
6
ns
10000
1000
VR = 20 V
100
10
1
0
14357
25 50 75 100 125 150 175 200
Tj – Junction Temperature (°C)
Figure 2. Reverse Current vs. Junction Temperature
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2
For technical questions within your region, please contact one of the following: Document Number 85539
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.6, 12-Aug-10
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