Philips Semiconductors
BAS21H
Single high-voltage switching diode in small SOD123F package
6. Thermal characteristics
Table 6:
Symbol
Rth(j-a)
Rth(j-sp)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
Min Typ Max Unit
[1] [2] -
-
330 K/W
-
-
70 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
7. Characteristics
Table 7: Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VF
forward voltage
IF = 100 mA
IF = 200 mA
IR
reverse current
VR = 200 V
VR = 200 V; Tj = 150 °C
Cd
diode capacitance VR = 0 V; f = 1 MHz
trr
reverse recovery
time
Min Typ
[1] -
-
[1] -
-
-
-
-
-
-
-
[2] -
-
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
[2] When switched from IF = 30 mA to IR = 30 mA; RL = 100 Ω; measured at IR = 3 mA
Max
1
1.25
100
100
5
50
Unit
mV
mV
nA
µA
pF
ns
9397 750 14879
Product data sheet
Rev. 01 — 11 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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