BAS21-V(2005) データシートの表示（PDF） - Vishay Semiconductors
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BAS21-V Datasheet PDF : 6 Pages
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BAS19-V / 20-V / 21-V
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Continuous reverse voltage
Repetitive peak reverse voltage
Non-repetitive peak forward
current
Non-repetitive peak forward
surge current
Maximum average forward
rectified current
DC forward current
Repetitive peak forward current
t = 1 µs
t=1s
(av. over any 20 ms period)
Tamb = 25 °C
Power dissipation
Tamb = 25 °C
1) Measured under pulse conditions; Pulse time = Tp ≤ 0.3 ms
2) Device on fiberglass substrate, see layout on next page
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
Test condition
Junction temperature
Storage temperature range
1) Device on fiberglass substrate, see layout on next page
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
Leakage current
Dynamic forward resistance
Diode capacitance
Reverse recovery time
IF = 100 mA
IF = 200 mA
VR = VRmax
VR = VRmax, Tj = 150 °C
IF = 10 mA
VR = 0, f = 1 MHz
IF = IR = 30 mA, RL = 100 Ω,
Irr = 3 mA
Part
Symbol
Value
Unit
BAS19-V
VR
100
V
BAS20-V
VR
150
V
BAS21-V
VR
200
V
BAS19-V
VRRM
120
V
BAS20-V
VRRM
200
V
BAS21-V
VRRM
250
V
IFSM
2.5
A
IFSM
0.5
A
IF(AV)
2001)
mA
IF
2002)
mA
IFRM
625
mA
Ptot
2502)
mW
Symbol
Value
Unit
RthJA
4301)
°C
Tj
150
°C
TS
- 65 to + 150
°C
Symbol
Min
Typ.
Max
Unit
VF
1.0
V
VF
1.25
V
IR
100
nA
IR
100
µA
rf
5
Ω
Ctot
5
pF
trr
50
ns
www.vishay.com
2
Document Number 85540
Rev. 1.5, 22-Jul-05
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