BAS282(2006) データシートの表示（PDF） - Vishay Semiconductors
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BAS282 Datasheet PDF : 5 Pages
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BAS281 / 282 / 283
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Junction to ambient air
on PC board
50 mm x 50 mm x 1.6 mm
Junction temperature
Storage temperature range
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
IF = 0.1 mA
IF = 1 mA
IF = 15 mA
Reverse current
VR = VRmax
Diode capacitance
VR = 1 V, f = 1 MHz
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
14
VR = 60 V
12
RthJA = 540 kW
10
8
PPRR - Limmiittaat t11000%%VRVR
6
4
PR - Limit at 80 % VR
2
0
25
15794
50
75
100
125
150
Tj - Junction Temperature (°C)
Figure 1. Max. Reverse Power Dissipation vs. Junction
Temperature
Symbol
Value
Unit
RthJA
320
K/W
Tj
125
°C
Tstg
- 65 to + 150
°C
Symbol
Min
VF
VF
VF
IR
CD
Typ.
Max
Unit
330
mV
410
mV
1000
mV
200
nA
1.6
pF
1000
100
VR = VRRM
10
1
0.1
25
15795
50
75
100
125
150
Tj - Junction Temperature (°C)
Figure 2. Reverse Current vs. Junction Temperature
www.vishay.com
2
Document Number 85500
Rev. 1.7, 17-Mar-06
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