BAS21-03WE6327 データシートの表示（PDF） - Infineon Technologies

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BAS21-03WE6327

Silicon Switching Diode

Infineon Technologies 

BAS21...

Thermal Resistance

Parameter

Junction - soldering point1)

BAS21

BAS21-03W

BAS21U

Symbol

RthJS

Value

Unit

K/W

≤ 230

≤ 105

≤ 110

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Breakdown voltage

V(BR)

250 -

-V

I(BR) = 100 µA

Reverse current

IR

µA

VR = 200 V

-

-

0.1

VR = 200 V, TA = 150 °C

-

- 100

Forward voltage

VF

V

IF = 100 mA

-

-

1

IF = 200 mA

-

- 1.25

AC Characteristics

Diode capacitance

CT

VR = 0 V, f = 1 MHz

Reverse recovery time

trr

IF = 30 mA, IR = 30 mA, measured at IR = 3mA,

RL = 100 Ω

-

-

5 pF

-

-

50 ns

Test circuit for reverse recovery time

D.U.T.

ΙF

Oscillograph

Puls generator: tp = 1µs, D = 0.05

tr = 0.6ns, Ri = 50Ω

Oscillograph: R = 50Ω , tr = 0.35ns, C ≤ 1pF

EHN00018

1For calculation of RthJA please refer to Application Note Thermal Resistance

2

2007-04-19

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