BAS70LT1G(2004) データシートの表示（PDF） - ON Semiconductor
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BAS70LT1G Datasheet PDF : 4 Pages
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BAS70LT1
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
• Pb−Free Package is Available
• Extremely Fast Switching Speed
• Low Forward Voltage
http://onsemi.com
70 VOLTS SCHOTTKY
BARRIER DIODES
3
CATHODE
1
ANODE
MAXIMUM RATINGS (TJ = 150°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
VR
70
V
PF
225
mW
1.8
mW/°C
Operating Junction and Storage
Temperature Range
TJ, Tstg − 55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
3
1
2
SOT−23
CASE 318
STYLE 8
MARKING DIAGRAM
BE M
BE
Specific Device Code
M
= Date Code
ORDERING INFORMATION
Device
BAS70LT1
BAS70LT1G
Package
SOT−23
SOT−23
(Pb−Free)
Shipping†
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
1
July, 2004 − Rev. 4
Publication Order Number:
BAS70LT1/D
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