BAT54SWT1 データシートの表示（PDF） - ON Semiconductor
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BAT54SWT1 Datasheet PDF : 4 Pages
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BAT54SWT1
Preferred Device
Dual Series Schottky
Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
• Extremely Fast Switching Speed
• Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc
• Pb−Free Package is Available
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
VR
30
V
PF
200
mW
1.6
mW/°C
Forward Current (DC)
IF
200 Max
mA
Junction Temperature
TJ
−55 to 125
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
30 VOLT
DUAL SERIES SCHOTTKY
BARRIER DIODES
1
ANODE
2
CATHODE
3
CATHODE/ANODE
3
1
2
MARKING
DIAGRAM
SOT−323
CASE 419
STYLE 9
B8M G
G
1
B8
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
BAT54SWT1 SOT−323 3000 / Tape & Reel
BAT54SWT1G SOT−323 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
1
October, 2005 − Rev. 8
Publication Order Number:
BAT54SWT1/D
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