BAW76(1999) データシートの表示（PDF） - Vishay Semiconductors

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BAW76
(Rev.:1999)

Silicon Epitaxial Planar Diode

Vishay Semiconductors 

BAW76

Vishay Telefunken

Electrical Characteristics

Tj = 25_C

Parameter

Forward voltage

Reverse current

Breakdown voltage

Diode capacitance

Reverse recovery time

Test Conditions

IF=100mA

VR=50V

VR=50V, Tj=150°C

IR=5mA, tp/T=0.01, tp=0.3ms

VR=0, f=1MHz, VHF=50mV

IF=IR=10mA, iR=1mA

W IF=10mA, VR=6V, iR=1mA,

RL=100

Type

Symbol Min Typ Max Unit

VF

IR

IR

V(BR)

CD

trr

trr

1V

100 nA

100 mA

75

V

1.7 2 pF

4 ns

2 ns

Dimensions in mm

technical drawings

according to DIN

specifications

94 9366

∅ 1.7 max.

Standard Glass Case

54 A 2 DIN 41880

JEDEC DO 35

Weight max. 0.3 g

Cathode Identification

26 min.

3.9 max.

∅ 0.55 max.

26 min.

www.vishay.de • FaxBack +1-408-970-5600

2 (3)

Document Number 85551

Rev. 2, 01-Apr-99

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