BAW78A-BAW79D データシートの表示（PDF） - Siemens AG

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BAW78A-BAW79D

Silicon Switching Diodes

Siemens AG 

BAW 79 A

… BAW 79 D

Electrical Characteristics per Diode

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Breakdown voltage

I(BR) = 100 µA

Forward voltage1)

IF = 1 A

IF = 2 A

Reverse current

VR = VRmax

VR = VRmax, TA = 150 ˚C

AC characteristics

Diode capacitance

VR = 0 V, f = 1 MHz

Reverse recovery time

IF = 200 mA, IR = 200 mA,

RL = 100 Ω

measured at IR = 20 mA

BAW 79 A

BAW 79 B

BAW 79 C

BAW 79 D

Test circuit for reverse recovery time

Symbol

Values

Unit

min. typ. max.

V(BR)

50

–

100 –

200 –

400 –

VF

–

–

–

–

IR

–

–

–

–

V

–

–

–

–

V

1.6

2

µA

1

50

CD

–

10 –

pF

trr

–

1

–

µs

Pulse generator: tp = 5 µs, D = 0.05

tr = 0.6 ns, Rj = 50 Ω

Oscillograph: R = 50 Ω

tr = 0.35 ns

C ≤ 1 pF

1) Pulse test: tp ≤ 300 µs, D = 2 %.

Semiconductor Group

2

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