BB731S データシートの表示（PDF） - General Semiconductor

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BB731S

Tuner Diodes

General Semiconductor 

BB731S

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Max.

Unit

Reverse Breakdown Voltage

at IR = 100 µA

Leakage Current

at VR = 30 V

Capacitance, f = 1 MHz

at VR = 28 V

at VR = 1 V

V(BR)R

32

–

IR

–

–

Ctot

2.9

–

Ctot

62.0

–

–

V

10

nA

3.4

pF

76.0

pF

Effective Capacitance Ratio, f = 1 MHz

at VR = 1 to 28 V

Ctot (1 V)

Ctot (28V)

19.5

–

–

–

Series Resistance

at f = 300 MHz, Ctot = 25 pF

rs

–

1.0

–

Ω

Series Inductance

Ls

–

2.5

–

nH

For any two of six consecutive diodes in the carrier tape, the maximum capacitance deviation in the reverse

bias voltage of VR = 0.5 to 28 V is max. 2.5%

278

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