BC350 データシートの表示（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd
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BC350 Datasheet PDF : 3 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC350 TRANSISTOR (PNP)
FEATURES
TO— 92
Power dissipation
PCM : 0.3 W（Tamb=25℃）
Collector current
ICM: -0.1 A
Collector-base voltage
V(BR)CBO : -50 V
Operating and storage junction temperature range
TJ，Tstg: -55℃ to +150℃
1.EMITTER
2. BASE
3. COLLECTOR
123
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol Test conditions
V(BR)CBO Ic= -100μA ， IE=0
V(BR)CEO IC= -1mA, IB=0
V(BR)EBO IE= -100μA， IC=0
ICBO
VCB=-50V, IE=0
ICEO
VCE=-35V, IB=0
IEBO
VEB= -3V, IC=0
hFE
VCE=-5 V, IC= -2mA
VCEsat
IC= -10mA, IB= -1mA
VBEsat
fT
IC= -10mA, IB= -1mA
VCE=-5 V,IC=-10mA,
f=30MHz
MIN TYP
-50
-45
-5
40
125
MAX UNIT
V
V
V
-0.1
μA
-0.1
μA
-0.1
μA
450
-0.3
V
-1
V
MHz
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