BC807DS データシートの表示（PDF） - Philips Electronics
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BC807DS Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP general purpose double transistor
Product specification
BC807DS
600
handbook, halfpage
hFE
500
(1)
MHC324
400
300
(2)
200
(3)
100
0
−10−1
−1
VCE = 1 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
−10
−102
−103
IC (mA)
Fig.2 DC current gain as a function of collector
current; typical values.
handb−o1o0k,0h0alfpage
IC
(mA)
(1)
(2)
(3)
−800
−600
−400
−200
MHC325
(4)
(5)
(6)
(7)
(8)
(9)
(10)
0
0
−2
−4
−6
(1) IB = −7 mA.
(2) IB = −6.3 mA.
(3) IB = −5.6 mA.
(4) IB = −4.9 mA.
(5) IB = −4.2 mA.
(6) IB = −3.5 mA.
(7) IB = −2.8 mA.
(8) IB = −2.1 mA.
−8
−10
VCE (V)
(9) IB = −1.4 mA.
(10) IB = −0.7 mA.
Fig.3 Collector current as a function of
collector-emitter voltage; typical values.
−103
handbook, halfpage
VCEsat
(mV)
−102
−10
MHC326
(1)
(2)
(3)
−1
−10−1
−1
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
−10
−102
−103
IC (mA)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
handb−o1o2k,0h0alfpage
VBE
(mV)
−1000
MHC327
−800
(1)
(2)
−600
−400
(3)
−200
−10−1
−1
VCE = 1 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
−10
−102
−103
IC (mA)
Fig.5 Base-emitter voltage as a function of
collector current; typical values.
2002 Nov 22
4
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