BC327T/R データシートの表示（PDF） - NXP Semiconductors.
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BC327T/R Datasheet PDF : 19 Pages
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NXP Semiconductors
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
ICBO
collector-base cut-off current
IEBO
hFE
hFE
VCEsat
VBE
Cc
fT
emitter-base cut-off current
DC current gain
BC807; BC807W; BC327
BC807-16; BC807-16W;
BC327-16
BC807-25; BC807-25W;
BC327-25
BC807-40; BC807-40W;
BC327-40
DC current gain
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
transition frequency
Conditions
IE = 0 A; VCB = −20 V
IE = 0 A; VCB = −20 V;
Tj = 150 °C
IC = 0 A; VEB = −5 V
IC = −100 mA; VCE = −1 V
IC = −500 mA; VCE = −1 V
IC = −500 mA; IB = −50 mA
IC = −500 mA; VCE = −1 V
IE = ie = 0 A; VCB = −10 V;
f = 1 MHz
IC = −10 mA; VCE = −5 V;
f = 100 MHz
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
[2] VBE decreases by approximately 2 mV/K with increasing temperature.
Min
Typ
Max
Unit
-
-
−100 nA
-
-
−5
μA
-
-
[1]
100
-
100
-
−100 nA
600
250
160
-
400
250
-
600
[1] 40
-
[1] -
-
-
−700 mV
[2] -
-
−1.2
V
-
5
-
pF
80
-
-
MHz
BC807_BC807W_BC327_6
Product data sheet
Rev. 06 — 17 November 2009
© NXP B.V. 2009. All rights reserved.
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