BC817U(2001) データシートの表示（PDF） - Infineon Technologies
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BC817U Datasheet PDF : 4 Pages
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BC817U
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 25 V, IE = 0
Collector cutoff current
VCB = 25 V, IE = 0 , TA = 150 °C
Emitter cutoff current
VEB = 4 V, IC = 0
DC current gain 1)
IC = 100 mA, VCE = 1 V
IC = 300 mA, VCE = 1 V
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
Base-emitter saturation voltage 1)
IC = 500 mA, IB = 50 mA
V(BR)CEO 45
-
-
V(BR)CBO 50
-
-
V(BR)EBO 5
-
-
ICBO
-
-
100
ICBO
-
-
50
IEBO
-
-
100
hFE
160 250 400
100 -
-
VCEsat
-
-
0.7
VBEsat
-
-
1.2
Unit
V
nA
µA
nA
-
V
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
fT
- 170 - MHz
Ccb
-
6
- pF
Ceb
-
60
-
1) Pulse test: t < 300s; D < 2%
2
Nov-29-2001
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