BC817-25QA データシートの表示（PDF） - NXP Semiconductors.
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BC817-25QA Datasheet PDF : 15 Pages
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Nexperia
BC817-25QA; BC817-40QA
45 V, 500 mA NPN general-purpose transistors
7. Characteristics
Table 8. Characteristics
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
collector-base
cut-off current
IEBO
emitter-base
cut-off current
VCB = 20 V; IE = 0 A
VCB = 20 V; IE = 0 A;
Tj = 150 C
VEB = 5 V; IC = 0 A
hFE
DC current gain
VCE = 1 V; IC = 100 mA
BC817-25QA
BC817-40QA
hFE
VCEsat
DC current gain
collector-emitter
saturation voltage
VCE = 1 V; IC = 500 mA
IC = 500 mA; IB = 50 mA
VBE
base-emitter voltage IC = 500 mA; VCE = 1 V
Cc
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
fT
transition frequency VCE = 5 V; IC = 10 mA;
f = 100 MHz
[1] Pulse test: tp 300 s; 0.02.
Min Typ Max Unit
-
-
100 nA
-
-
5
A
-
-
100 nA
[1]
160 -
250 -
[1] 40
-
[1] -
-
400
600
-
700 mV
[1] -
-
1.2 V
-
3
-
pF
100 -
-
MHz
600
hFE
(1)
400
(2)
200
(3)
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$
DDD
,% P$
0
10−1
1
10
102
103
IC (mA)
VCE = 1 V
(1) Tamb = 100 C
(2) Tamb = 25 C
(3) Tamb = 55 C
Fig 7. BC817-25QA: DC current gain as a function of
collector current; typical values
9&( 9
Tamb = 25 C
Fig 8. BC817-25QA: Collector current as a function
of collector-emitter voltage; typical values
BC817-25QA_40QA
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 3 September 2013
© Nexperia B.V. 2017. All rights reserved
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