BC846BPN データシートの表示（PDF） - NXP Semiconductors.
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BC846BPN Datasheet PDF : 12 Pages
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NXP Semiconductors
BC846BS
65 V, 100 mA NPN/NPN general-purpose transistor
103
Zth(j-a)
(K/W)
102
δ=1
0.50
0.20
0.75
0.33
0.10
0.05
0.02
10 0.01
0
006aab619
1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
Fig 2.
FR4 PCB, standard footprint
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per transistor
ICBO
collector-base cut-off VCB = 50 V; IE = 0 A
current
VCB = 30 V; IE = 0 A;
Tj = 150 °C
IEBO
emitter-base cut-off VEB = 6 V; IC = 0 A
current
hFE
VCEsat
VBEsat
VBE
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
base-emitter voltage
VCE = 5 V
IC = 10 µA
IC = 2 mA
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
IC = 10 mA; IB = 0.5 mA
IC = 100 mA; IB = 5 mA
VCE = 5 V
IC = 2 mA
IC = 10 mA
Min Typ Max Unit
-
-
15
nA
-
-
5
µA
-
-
100 nA
-
280 -
200 300 450
-
55
100 mV
-
200 300 mV
-
755 850 mV
-
1000 -
mV
580 650 700 mV
-
-
770 mV
BC846BS_1
Product data sheet
Rev. 01 — 24 August 2009
© NXP B.V. 2009. All rights reserved.
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