BC847PN(2008) データシートの表示（PDF） - Diodes Incorporated.
部品番号
コンポーネント説明
メーカー
BC847PN Datasheet PDF : 4 Pages
| |||
BC847PN
Electrical Characteristics, NPN Section @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Symbol Min
Typ
Max
Unit
(Note 5) V(BR)CBO 50
—
—
V
(Note 5) V(BR)CEO 45
—
—
V
(Note 5) V(BR)EBO
6
—
—
V
(Note 5) hFE
200
290
450
—
(Note 5) VCE(SAT)
—
90
200
250
600
mV
(Note 5) VBE(SAT)
—
700
900
—
mV
(Note 5) VBE(ON)
580
—
660
—
700
720
mV
(Note 5)
ICBO
ICBO
—
—
—
—
15
nA
5.0
µA
fT
100
300
—
MHz
CCBO
—
3.5
6.0
pF
Noise Figure
NF
—
2.0
10
dB
Test Condition
IC = 10μA, IB = 0
IC = 10mA, IB = 0
IE = 1μA, IC = 0
VCE = 5.0V, IC = 2.0mA
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
VCE = 5.0V, IC = 2.0mA
VCE =5.0V, IC = 10mA
VCB = 30V
VCB = 30V, TA = 150°C
VCE = 5.0V, IC = 10mA, f = 100MHz
VCB = 10V, f = 1.0MHz
VCE = 5V, IC = 200µA, RG = 2.0kΩ,
f = 1.0kHz, Δf = 200Hz
Electrical Characteristics, PNP Section @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
Symbol Min
(Note 5) V(BR)CBO -50
(Note 5) V(BR)CEO -45
(Note 5) V(BR)EBO
-5
(Note 5) hFE
220
(Note 5) VCE(SAT)
—
(Note 5) VBE(SAT)
(Note 5) VBE(ON)
(Note 5)
ICBO
ICBO
fT
CCBO
NF
—
-600
—
—
—
100
—
—
Typ
—
—
—
290
-75
-250
-700
-850
-650
—
—
—
200
3
—
Max
—
—
—
475
-300
-650
—
-950
-750
-820
-15
-4.0
—
4.5
10
Unit
V
V
V
—
mV
mV
mV
nA
µA
MHz
pF
dB
Notes: 5. Short duration pulse test used to minimize self-heating effect.
Test Condition
IC = -10μA, IB = 0
IC = -10mA, IB = 0
IE = -1μA, IC = 0
VCE = -5.0V, IC = -2.0mA
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
IC = -10mA, IB = -0.5mA
IC = -100mA, IB = -5.0mA
VCE = -5.0V, IC = -2.0mA
VCE = -5.0V, IC = -10mA
VCB = -30V
VCB = -30V, TA = 150°C
VCE = -5.0V, IC = -10mA, f = 100MHz
VCB = -10V, f = 1.0MHz
VCE = -5V, IC = -200µA, RG = 2.0kΩ,
f = 1.0kHz, Δf = 200Hz
250
1,000
200
100
150
100
10
50
RθJA = 625°C/W
0
0
40
80
120
160
200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
(Total Device, Note 1)
1
0.01
0.1
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current (NPN)
BC847PN
Document number: DS30278 Rev. 12 - 2
2 of 4
www.diodes.com
November 2008
© Diodes Incorporated
Share Link: 