BC847(2012) データシートの表示（PDF） - NXP Semiconductors.
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BC847 Datasheet PDF : 15 Pages
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NXP Semiconductors
BC847 series
45 V, 100 mA NPN general-purpose transistors
400
hFE
(1)
300
200
(2)
(3)
100
mgt723
1200
VBE
(mV)
1000
(1)
800
(2)
600
(3)
400
200
mgt724
0
10−1
1
10
102
103
IC (mA)
VCE = 5 V
(1) Tamb = 150 C
(2) Tamb = 25 C
(3) Tamb = 55 C
Fig 1. Group A: DC current gain as a function of
collector current; typical values
103
VCEsat
(mV)
mgt725
102
(1)
(2)
(3)
0
10−1
1
10
102
103
IC (mA)
VCE = 5 V
(1) Tamb = 55 C
(2) Tamb = 25 C
(3) Tamb = 150 C
Fig 2. Group A: Base-emitter voltage as a function of
collector current; typical values
1200
VBEsat
(mV)
1000
(1)
800
(2)
600
(3)
400
mgt726
200
10
10−1
1
10
102
103
IC (mA)
IC/IB = 20
(1) Tamb = 150 C
(2) Tamb = 25 C
(3) Tamb = 55 C
Fig 3.
Group A: Collector-emitter saturation voltage
as a function of collector current; typical
values
0
10−1
1
10
102
103
IC (mA)
IC/IB = 10
(1) Tamb = 55 C
(2) Tamb = 25 C
(3) Tamb = 150 C
Fig 4. Group A: Base-emitter saturation voltage as a
function of collector current; typical values
BC847_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 20 August 2012
© NXP B.V. 2012. All rights reserved.
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