BCW30 データシートの表示（PDF） - Philips Electronics
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BCW30 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP general purpose transistors
Product specification
BCW29; BCW30
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
VBEsat
emitter cut-off current
DC current gain
BCW29
BCW30
DC current gain
BCW29
BCW30
collector-emitter saturation
voltage
base-emitter saturation voltage
VBE
base-emitter voltage
Cc
collector capacitance
fT
transition frequency
F
noise figure
CONDITIONS
MIN. TYP. MAX. UNIT
IE = 0; VCB = −32 V
IE = 0; VCB = −32 V; Tj = 100 °C
IC = 0; VEB = −5 V
IC = −10 µA; VCE = −5 V
−
−
−100 nA
−
−
−10 µA
−
−
−100 nA
−
90 −
−
150 −
IC = −2 mA; VCE = −5 V
120 −
260
215 −
500
IC = −10 mA; IB = −0.5 mA
−
IC = −50 mA; IB = −2.5 mA
−
IC = −10 mA; IB = −0.5 mA
−
IC = −50 mA; IB = −2.5 mA
−
IC = −2 mA; VCE = −5 V
−600
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
IC = −10 mA; VCE = −5 V; f = 100 MHz 100
IC = −200 µA; VCE = −5 V; RS = 2 kΩ; −
f = 1 kHz; B = 200 Hz
−80
−150
−720
−810
−
4.5
−
−
−300
−
−
−
−750
−
−
10
mV
mV
mV
mV
mV
pF
MHz
dB
1999 Apr 13
3
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