BCW30 データシートの表示（PDF） - Diotec Semiconductor Germany

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BCW30

Surface Mount General Purpose Si-Epi-Planar Transistors

Diotec Semiconductor Germany  

BCW29, BCW30

Characteristics (Tj = 25°C)

Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)

- IC = 10 mA, - IB = 0.5 mA

- IC = 50 mA, - IB = 2.5 mA

Base-Emitter-voltage – Basis-Emitter-Spannung 2)

- IC = 2 mA, - VCE = 5 V

Collector-Base cutoff current – Kollektor-Basis-Reststrom

- VCB = 30 V, (E open)

- VCE = 30 V, Tj = 100°C, (E open)

Emitter-Base cutoff current

- VEB = 5 V, (C open)

Gain-Bandwidth Product – Transitfrequenz

- VCE = 5 V, - IC = 10 mA, f = 100 MHz

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- VCB = 10 V, IE =ie = 0, f = 1 MHz

Noise figure – Rauschzahl

- VCE = 5 V, - IC = 200 µA, RG = 2 kΩ

f = 1 kHz, Δf = 200 Hz

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

Marking - Stempelung

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

- VBEsat

–

720 mV

–

- VBEsat

–

810 mV

–

- VBE 600 mV

–

750 mV

- ICB0

–

- ICB0

–

–

100 nA

–

10 µA

- IEB0

–

–

100 nA

fT 100 MHz

–

–

CCBO

–

4.5 pF

–

F

–

–

10 dB

RthA

< 420 K/W 1)

BCW31 ... BCW33

BCW29 = C1

BCW30 = C2

2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

1 Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

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