BCW67 データシートの表示（PDF） - KEXIN Industrial

部品番号

コンポーネント説明

メーカー

BCW67

PNP General Purpose Transistors

KEXIN Industrial 

SMD Type

TransistIoCrs

BCW67,BCW68

Electrical Characteristics Ta = 25

Parameter

BCW67

Collector-emitter breakdown voltage

BCW68

Collector-base breakdown voltage

BCW67

BCW68

Emitter-base breakdown voltage

BCW67

Collector cutoff current

Emitter cutoff current

DC current gain *

DC current gain *

DC current gain *

BCW68

BCW67

BCW68

A/F

hFE-group B/G

C/H

A/F

hFE-group B/G

C/H

A/F

hFE-group B/G

C/H

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

Transition frequency

Collector-base capacitance

Emitter-base capacitance

* Pulse test: t 300ìs, D = 2%.

hFE Classification

TYPE

Rank

A

Marking

DAs

BCW67

B

DBs

Symbol

Testconditons

Min

-32

V(BR)CEO IC = -10 mA, IB = 0

-45

-45

V(BR)CBO IC = -10 ìA, IE = 0

-60

V(BR)EBO IE = -10ìA, IC = 0

-5

ICBO

VCB = -32 V, IE = 0

VCB = -45 V, IE = 0

ICBO

VCB = -32 V, IE = 0 , TA = 150

VCB = -45 V, IE = 0 , TA = 150

IEBO VEB = -4 V, IC = 0

35

hFE IC = 100 ìA, VCE = 10 V

50

80

75

hFE IC = 10 mA, VCE = 1 V

120

180

100

hFE IC = -100 mA, VCE = -1 V

160

250

IC = -100 mA, IB = -10 mA

VCE(sat)

IC = -500 mA, IB = -50 mA

IC = -100 mA, IB = -10 mA

VBE(sat)

IC = -500 mA, IB = -50 mA

fT IC = -50 mA, VCE = -5 V, f = 20 MHz

Ccb VCB = -10 V, f = 1 MHz

Ceb VEB = -0.5 V, f = 1 MHz

C

DCs

Typ Max Unit

V

V

V

-20

nA

-20

-20

ìA

-20

-20 nA

160 250

250 400

350 630

-0.3

-0.7

V

-1.25

-2

200

MHz

6

pF

60

TYPE

Rank

F

Marking

DFs

BCW68

G

H

DGs

DHs

2 www.kexin.com.cn

Share Link: