BD2200GUL(2009) データシートの表示（PDF） - ROHM Semiconductor

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BD2200GUL
(Rev.:2009)

Power management switch IC

ROHM Semiconductor 

1/4

Structure

Product

Type

Feature

Silicon monolithic integrated circuit

Power management switch IC

BD2200GUL

Single channel of low on resistance (Typ = 100mΩ) N-channel MOSFET built in

Reverse-current protection when power switch off （Under operating conditions）

Output discharge circuit

◇Absolute maximum ratings (Ta=25℃)

Parameter

Symbol

Rating

Unit

Supply voltage

VDD

-0.3 ～ 6.0

V

VIN voltage

VIN

-0.3 ～ 6.0

V

EN voltage

VEN

-0.3 ～ VDD + 0.3

V

VOUT voltage

VOUT

-0.3 ～ 6.0

V

Storage temperature

TSTG

-55 ～ 150

℃

Power dissipation

Pd

575*1

mW

*1 Mounted on 50mm * 58mm * 1.75mm glass-epoxy PCB. Derating: 4.6mW/℃ above Ta = 25℃.

* This product is not designed for protection against radioactive rays.

◇Operating conditions

Parameter

Switch input voltage

Operating temperature

Output current

Symbol

MIN

TYP

MAX

Unit

VIN

2.7

3.3

5.5

V

TOPR

-25

25

85

°C

ILO

0

-

500

mA

REV. B

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