DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BD745B データシートの表示(PDF) - Power Innovations

部品番号
コンポーネント説明
メーカー
BD745B
Power-Innovations
Power Innovations Power-Innovations
BD745B Datasheet PDF : 6 Pages
1 2 3 4 5 6
BD745, BD745A, BD745B, BD745C
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
BD745
45
Collector-emitter
V(BR)CEO breakdown voltage
IC = 30 mA
IB = 0
BD745A
60
(see Note 5)
BD745B
80
BD745C
100
VCE = 50 V
VBE = 0
BD745
0.1
VCE = 70 V
VBE = 0
BD745A
0.1
VCE = 90 V
VBE = 0
BD745B
0.1
ICBO
Collector cut-off
current
VCE = 110 V
VCE = 50 V
VBE = 0
VBE = 0
TC = 125°C
BD745C
BD745
0.1
5
VCE = 70 V
VBE = 0
TC = 125°C
BD745A
5
VCE = 90 V
VBE = 0
TC = 125°C
BD745B
5
VCE = 110 V
VBE = 0
TC = 125°C
BD745C
5
ICEO
Collector cut-off
current
VCE = 30 V
VCE = 60 V
IB = 0
IB = 0
BD745/745A
0.1
BD745B/745C
0.1
Emitter cut-off
IEBO current
VEB = 5 V
IC = 0
0.5
Forward current
hFE
transfer ratio
VCE(sat)
VBE
hfe
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
VCE = 4 V
VCE = 4 V
VCE = 4 V
IB = 0.5 A
IB = 5 A
VCE = 4 V
VCE = 4 V
VCE = 10 V
IC = 1 A
IC = 5 A
IC = 20 A
IC = 5 A
IC = 20 A
IC = 5 A
IC = 20 A
IC = 1 A
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
f = 1 kHz
40
20
150
5
1
3
1
3
25
|hfe|
Small signal forward
current transfer ratio
VCE = 10 V
IC = 1 A
f = 1 MHz
5
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
1.1 °C/W
35.7 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
td
Delay time
tr
Rise time
ts
Storage time
tf
Fall time
IC = 5 A
VBE(off) = -4.2 V
IB(on) = 0.5 A
RL = 6
IB(off) = -0.5 A
tp = 20 µs, dc 2%
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
20
ns
350
ns
500
ns
400
ns
PRODUCT INFORMATION
2

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]