BD743 データシートの表示（PDF） - Inchange Semiconductor
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BD743 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD743
V(BR)CEO
Collector-emitter
breakdown voltage
BD743A
BD743B
IC=30mA; IB=0
BD743C
VCEsat-1 Collector-emitter saturation voltage
IC=5 A;IB=0.5 A
VCEsat-2 Collector-emitter saturation voltage
IC=15 A;IB=5 A
VBE -1 Base-emitter on voltage
IC=5A ; VCE=4V
VBE -2 Base-emitter on voltage
IC=15A ; VCE=4V
BD743/A VCE=30V; IB=0
ICEO
Collector cut-off current
BD743B/C VCE=60V; IB=0
BD743
VCE=50V; VBE=0
TC=125℃
ICBO
Collector cut-off current
BD743A
BD743B
VCE=70V; VBE=0
TC=125℃
VCE=90V; VBE=0
TC=125℃
BD743C
VCE=110V; VBE=0
TC=125℃
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=4V
hFE-2
DC current gain
IC=5A ; VCE=4V
hFE-3
DC current gain
IC=15A ; VCE=4V
Switching times resistive load
td
Delay time
tr
Rise time
ts
Storage time
IC=5 A;IB1=-IB2=0.5 A
VBE(off)=-4.2V; RL=6Ω
tp=20μs
tf
Fall time
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
2
Product Specification
BD743/A/B/C
MIN TYP. MAX UNIT
45
60
V
80
100
1.0
V
3.0
V
1.0
V
3.0
V
0.1
mA
0.1
5.0
0.1
5.0
mA
0.1
5.0
0.1
5.0
0.5
mA
40
20
150
5
0.02
μs
0.35
μs
0.5
μs
0.4
μs
MAX
1.40
UNIT
℃/W
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