BD745B データシートの表示（PDF） - SavantIC Semiconductor

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BD745B

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

BD745

V(BR)CEO

Collector-emitter

breakdown voltage

BD745A

BD745B

IC=30mA; IB=0

BD745C

VCEsat-1 Collector-emitter saturation voltage

IC=5 A;IB=0.5 A

VCEsat-2 Collector-emitter saturation voltage

IC=20 A;IB=5 A

VBE -1

Base-emitter on voltage

IC=5A ; VCE=4V

VBE -2

Base-emitter on voltage

IC=20A ; VCE=4V

BD745/A VCE=30V; IB=0

ICEO

Collector cut-off current

BD745B/C VCE=60V; IB=0

BD745

VCE=50V; VBE=0

TC=125

ICBO

Collector cut-off current

BD745A

BD745B

VCE=70V; VBE=0

TC=125

VCE=90V; VBE=0

TC=125

BD745C

VCE=110V; VBE=0

TC=125

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE-1

DC current gain

IC=1A ; VCE=4V

hFE-2

DC current gain

IC=5A ; VCE=4V

hFE-3

DC current gain

IC=20A ; VCE=4V

Switching times resistive load

td

Delay time

tr

Rise time

ts

Storage time

tf

Fall time

IC=5 A;IB1=-IB2=0.5 A

VBE(off)=-4.2V; RL=6A

tp=20µs

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c

Thermal resistance junction to case

2

Product Specification

BD745/A/B/C

MIN TYP. MAX UNIT

45

60

V

80

100

1.0

V

3.0

V

1.0

V

3.0

V

0.1

mA

0.1

5.0

0.1

5.0

0.1

mA

5.0

0.1

5.0

0.5

mA

40

20

150

5

0.02

µs

0.35

µs

0.5

µs

0.4

µs

MAX

1.1

UNIT

/W

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