Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BDV67/67A/67B/67C/67D
DESCRIPTION
·With TO-3PN package
·Complement to type BDV66/66A/66B/66C/66D
·DARLINGTON
·High DC current gain
APPLICATIONS
·For use in audio output stages and general
amplifier and switching applications.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25℃)
体 SYMBOL
PARAMETER
固I电NC半H导ANGE SEMICONDUCTOR BDV67
BDV67A
VCBO
Collector-base voltage BDV67B
BDV67C
BDV67D
BDV67
CONDITIONS
Open emitter
VALUE
80
100
120
140
160
60
UNIT
V
BDV67A
80
VCEO
Collector-emitter voltage BDV67B Open base
100
V
BDV67C
120
BDV67D
150
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
16
A
ICM
Collector current-peak
20
A
IB
Base current
0.5
A
PC
Collector power dissipation
TC=25℃
200
W
Tj
Junction temperature
Tstg
Storage temperature
150
℃
-65~150
℃