BDV67C データシートの表示（PDF） - SavantIC Semiconductor
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BDV67C Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BDV67/67A/67B/67C/67D
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDV67
60
BDV67A
80
V(BR)CEO
Collector-emitter
breakdown voltage
BDV67B IC=30mA, IB=0
100
V
BDV67C
120
BDV67D
150
VCEsat Collector-emitter saturation voltage IC=10A ,IB=40mA
2.0
V
VBE
Base-emitter on voltage
IC=10A ; VCE=3V
2.5
V
ICBO
Collector cut-off current
VCB=VCBOmax, IE=0
VCB=1/2VCBOmax; Tj=150℃
1.0
4.0
mA
ICEO
Collector cut-off current
VCE=1/2VCEOmax, IB=0
1
mA
IEBO
固I电NC半H导A体NGE SEMICONDUCTOR hFE-1
hFE-2
hFE-3
CC
VF
Emitter cut-off current
DC current gain
DC current gain
DC current gain
Collector capacitance
Diode forward voltage
VEB=5V; IC=0
IC=1A ; VCE=3V
IC=10A ; VCE=3V
IC=16A ; VCE=3V
IE=0 ; VCB=10V;f=1MHz
IE=10A
5
mA
3000
1000
1000
300
pF
3.0
V
ton
Turn-on time
toff
Turn-off time
IC = 10 A, IB1 =-IB2=40 mA
VCC = 12V
1.0
μs
3.5
μs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-mb Thermal resistance junction to mounting base
MAX
0.625
UNIT
K/W
2
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