BDW84D データシートの表示（PDF） - SavantIC Semiconductor

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BDW84D

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

BDW84/84A/84B/84C/84D

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

BDW84

CONDITIONS

V(BR)CEO

Collector-emitter

breakdown voltage

BDW84A

BDW84B IC=-30mA, IB=0

BDW84C

BDW84D

VCEsat-1 Collector-emitter saturation voltage IC=-6A ,IB=-12mA

VCEsat-2 Collector-emitter saturation voltage IC=-15A ,IB=-150mA

VBE

Base-emitter on voltage

IC=-6A ; VCE=-3V

ICBO

Collector

cut-off current

BDW84

BDW84A

BDW84B

BDW84C

BDW84D

VCB=-45V, IE=0

TC=150

VCB=-60V, IE=0

TC=150

VCB=-80V, IE=0

TC=150

VCB=-100V, IE=0

TC=150

VCB=-120V, IE=0

TC=150

BDW84

VCE=-30V, IB=0

ICEO

Collector

cut-off current

BDW84A VCE=-30V, IB=0

BDW84B VCE=-40V, IB=0

BDW84C VCE=-50V, IB=0

BDW84D VCE=-60V, IB=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-6A ; VCE=-3V

hFE-2

DC current gain

IC=-15A ; VCE=-3V

VEC

Diode forward voltage

IE=-15A

ton

Turn-on time

toff

Turn-off time

IC =-10 A, IB1 =-IB2=-40 mA

RL=3B; VBE(off) =4.2V

Duty CycleC2%

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c

Thermal resistance junction to case

2

MIN

-45

-60

-80

-100

-120

TYP.

MAX UNIT

V

-2.5

V

-4.0

V

-2.5

V

-0.5

-5.0

-0.5

-5.0

-0.5

-5.0

mA

-0.5

-5.0

-0.5

-5.0

-1

mA

-2

mA

750

20000

100

-3.5

V

0.9

As

7.0

As

MAX

0.83

UNIT

/W

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