BDV67(2012) データシートの表示（PDF） - Comset Semiconductors

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BDV67
(Rev.:2012)

NPN SILICON DARLINGTONS POWER TRANSISTORS

Comset Semiconductors 

BDV67-A-B-C-D

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx Unit

VCE= 30 V, IB= 0

BDV67

-

-

ICEO

Collector Cutoff

Current

VCE= 40 V, IB= 0

VCE= 50 V, IB= 0

VCE= 60 V, IB= 0

BDV67A -

-

BDV67B -

-

1 mA

BDV67C -

-

VCE= 75 V, IB= 0

BDV67D -

-

BDV67

-

-

BDV67A -

-

IEBO

Emitter Cutoff Current VBE= 5 V, Ic= 0

BDV67B -

BDV67C -

- 5.0 mA

-

BDV67D -

-

VCB= 80 V BDV67

-

-

VCB= 100 V BDV67A

-

-

IB= 0

Tj=25°C

VCB= 120 V

VCB= 140 V

BDV67B

BDV67C

-

-

-

-

1

ICBO

Collector-Base Cutoff

Current

VCB= 160 V BDV67D

-

-

VCB= 40 V BDV67

-

-

mA

IB= 0

VCB= 50 V BDV67A

-

-

Tj=150° VCB= 60 V BDV67B

-

-

4

C

VCB= 70 V BDV67C

-

-

VCB= 80 V BDV67D

-

-

BDV67

60

-

-

VCEO

Collector-emitter

Breakdown Voltage (*)

IC= 30 mA, IB= 0

BDV67A 80 -

-

BDV67B 100 -

-

BDV67C 120 -

-

V

BDV67D 150 -

-

VCE= 3 V, IC= 1 A

BDV67

BDV67A

- 3000 -

hFE

DC Current Gain (*) VCE= 3 V, IC= 10 A BDV67B 1000 -

-

-

VCE= 3 V, IC= 16 A

BDV67C

BDV67D

- 1000 -

BDV67

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC= 10 A, IB= 40 mA

BDV67A

BDV67B

BDV67C

-

-

2

V

BDV67D

26/09/2012

COMSET SEMICONDUCTORS

3/5

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