BDV67 データシートの表示（PDF） - Comset Semiconductors

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BDV67

NPN SILICON DARLINGTONS POWER TRANSISTORS

Comset Semiconductors 

BDV67A, B, C, D

THERMAL CHARACTERISTICS

Symbol

Ratings

RthJ-mb

Thermal Resistance, Junction to

Mounting Base

BDV67A

BDV67B

BDV67C

BDV67D

Value

0.625

Unit

°C/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

ICEO

Collector Cutoff Current

IEBO

Emitter Cutoff Current

Collector-Base Cutoff

ICBO

Current

Test Condition(s)

Min Typ Mx Unit

VCE=40 V

VCE=50 V

VCE=60 V

VCE=75 V

VBE=5 V

Tj=25°C, VCB= VCBO

Tj=150°C, VCB= VCBO

BDV67A -

BDV67B -

BDV67C -

BDV67D -

BDV67A -

BDV67B

BDV67C

BDV67D

BDV67A -

BDV67B

BDV67C

BDV67D

BDV67A -

BDV67B

BDV67C

BDV67D

-

-

3 mA

-

-

-

5.0 mA

-

1

mA

-

5

COMSET SEMICONDUCTORS

2/5

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