BDV66C データシートの表示（PDF） - Inchange Semiconductor
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BDV66C Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDV66/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDV66
VCEO(SUS)
Collector-Emitter
Sustaining Voltage
BDV66A
BDV66B
IC= -100mA ;IB=0
BDV66C
VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -40mA
VBE(on) Base-Emitter On Voltage
ICEO
Collector Cutoff Current
IC= -10A ; VCE= -3V
VCE= 1/2VCEOmax; IB= 0
BDV66
VCB= -40V;IE= 0;TJ= 150℃
BDV66A VCB= -50V;IE= 0;TJ= 150℃
ICBO
Collector Cutoff Current
BDV66B VCB= -60V;IE= 0;TJ= 150℃
BDV66C VCB= -70V;IE= 0;TJ= 150℃
ICBO
Collector Cutoff Current
VCB= VCBOmax;IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
COB
Output Capacitance
Switching times
IC= -10A ; VCE= -3V
IE= 0 ; VCB= -10V; ftest= 1MHz
ton
Turn-on Time
toff
Turn-off Time
IC= -10A; IB1= -IB2= -40mA;
VCC= 12V
MIN TYP. MAX UNIT
-60
-80
V
-100
-120
-2
V
-2.5 V
-1 mA
-5 mA
-1 mA
-5 mA
1000
300
pF
1
μs
3.5
μs
isc Website：www.iscsemi.cn
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