BF1005 データシートの表示（PDF） - Infineon Technologies

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BF1005

Silicon N-Channel MOSFET Tetrode

Infineon Technologies 

BF1005...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

AC Characteristics (verified by random sampling)

Forward transconductance

VDS = 5 V, VG2S = 4.5 V

Gate1 input capacitance

VDS = 5 V, VG2S = 4 V, f = 10 MHz

Output capacitance

VDS = 5 V, VG2S = 4 V, f = 10 MHz

Power gain (self biased)

VDS = 5 V, VG2S = 4 V, f = 800 MHz

Noise figure

gfs

Cg1ss

Cdss

Gp

F

20 24

- mS

-

2.1 2.5 pF

-

1.3

-

17 19

- dB

-

1.6 2.5 dB

VDS = 5 V, VG2S = 4 V, f = 800 MHz

Gain control range

VDS = 5 V, VG2S = 4V ...0V, f = 800 GHz

∆Gp

40 50

-

3

2007-04-20

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