DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BF2040 データシートの表示(PDF) - Siemens AG

部品番号
コンポーネント説明
メーカー
BF2040 Datasheet PDF : 2 Pages
1 2
BF 2040
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Drain-source breakdown voltage
ID = 650 µA, -VG1S = 4 V, - VG2S = 4 V
V(BR)DS
-
12
-V
Gate 1 - source breakdown voltage
+IG1S = 10 mA, VG2S = 0 V, VDS = 0 V
Gate 2 - source breakdown voltage
±IG2S = 10 mA, VG1S = VDS = 0
+V(BR)G1SS -
8.5
-
+V(BR)G2SS -
8.5
-
Gate 1 source current
VG1S = 5 V, VG2S = 0 V
+IG1SS
-
-
50 nA
Gate 2 source leakage current
VG2S = 5 V, VG1S = 0 V, VDS = 0 V
Drain current
VDS = 5 V, VG1S = 0 V, VG2S = 4 V
+IG2SS
I DSS
-
-
50
-
-
- µA
Drain-source current
VDS = 5 V, VG2S = 4 V, RG1 = 40 k
I DSX
-
15
- mA
Gate 2-source pinch-off voltage
VDS = 5 V, ID = 20 µA
Gate 1-source pinch-off voltage
VDS = 5 V, VG2S = 4 V, ID = 20 µA
VG2S(p)
VG1S(p)
0.3 0.6
0.3 0.7
-V
-
AC characteristics
Forward transconductance
VDS = 5 V, ID = 15 mA, VG2S = 4 V
Gate 1 input capacitance
VDS = 5 V, ID = 15 mA, VG2S = 4 V,
f = 1 MHz
gfs
Cg1ss
-
45
- mS
-
3.7
- pF
Output capacitance
VDS = 5 V, ID = 10 mA, VG2S = 4 V,
f = 1 MHz
Noise figure
VDS = 5 V, ID = 15 mA, f = 800 MHz
Cdss
F
-
2.3
-
-
2
- dB
SSeemmicioconndduuctcotor rGGrorouupp
22
Jun1-90958--11919-081

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]