BF256B データシートの表示（PDF） - Fairchild Semiconductor

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BF256B

N-Channel RF Amplifiers

Fairchild Semiconductor 

Electrical Characteristics

Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

V(BR)GSS

VGS

VGS(off)

IGSS

IDSS

gfs

Gate-Source Breakdown Voltage

Gate-Source Voltage

Gate-Source Cut-Off Voltage

Gate Reverse Current

Zero-Gate Voltage Drain Current

Common Source Forward

Transconductance

Conditions

VDS = 0, IG = 1 μA

VDS = 15 V, ID = 200 μA

VDS = 15 V, ID = 10 nA

VGS = -20 V, VDS = 0

VDS = 15 V, VGS = 0

VDS = 15 V, VGS = 0,

f= 1 kHz

Min.

-30

-0.5

-0.5

6

4.5

Max.

-7.5

-8.0

-5

13

Unit

V

V

V

nA

mA

mmhos

© 2003 Fairchild Semiconductor Corporation

BF256B Rev. 1.1.0

2

www.fairchildsemi.com

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