BF1207 データシートの表示（PDF） - NXP Semiconductors.
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BF1207 Datasheet PDF : 23 Pages
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NXP Semiconductors
BF1207
Dual N-channel dual gate MOSFET
Table 7. Static characteristics …continued
Tj = 25 C.
Symbol Parameter
IG1-S
gate1 cut-off current
IG2-S
gate2 cut-off current
Conditions
VG2-S = VDS(A) = 0 V
amplifier A; VG1-S(A) = 5 V; VDS(B) = 0 V
amplifier B; VG1-S(A) = 0 V; ID(B) = 0 A
VG2-S = 4 V; VG1-S = VDS(A) = VDS(B) = 0 V;
[1] RG1 connects gate1 (A) to VGG = 5 V (see Figure 3).
[2] RG1 connects gate1 (B) to VGG = 0 V (see Figure 3).
Min Typ Max Unit
- - 50 nA
- - 50 nA
- - 20 nA
20
ID
(mA)
16
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(1)
(2)
12
(3)
8
(4)
4
(6)
(5)
0
0
1
2
3
4
5
VGG (V)
G1B
G2
G1A
RG1
VGG
DB
S
DA
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(1) ID(A); RG1 = 47 k.
(2) ID(A); RG1 = 68 k.
(3) ID(A); RG1 = 100 k.
(4) ID(B); RG1 = 100 k.
(5) ID(B); RG1 = 68 k.
(6) ID(B); RG1 = 47 k.
VDS(A) = VDS(B) = 5 V; VG2-S = 4 V; Tj = 25 C.
Fig 2. Drain currents of MOSFET A and B as function
of VGG
VGG = 5 V: amplifier A is on; amplifier B is off.
VGG = 0 V: amplifier A is off; amplifier B is on.
Fig 3. Functional diagram
BF1207
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 7 September 2011
© NXP B.V. 2011. All rights reserved.
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