BF1208 データシートの表示（PDF） - NXP Semiconductors.

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BF1208

Dual N-channel dual gate MOSFET

NXP Semiconductors. 

NXP Semiconductors

BF1208

Dual N-channel dual gate MOSFET

8.2 Dynamic characteristics for amplifier B

Table 11. Dynamic characteristics for amplifier B[1]

Common source; Tamb = 25 C; VG2-S = 4 V; VDS = 5 V; ID = 13 mA; unless otherwise specified.

Symbol Parameter

Conditions

Min Typ

yfs

Ciss(G1)

Ciss(G2)

Coss

Crss

Gtr

NF

Xmod

forward transfer admittance Tj = 25 C

input capacitance at gate1 f = 1 MHz

input capacitance at gate2 f = 1 MHz

output capacitance

f = 1 MHz

reverse transfer capacitance f = 1 MHz

power gain

noise figure

cross-modulation

BS = BS(opt); BL = BL(opt)

f = 200 MHz; GS = 2 mS; GL = 0.5 mS

f = 400 MHz; GS = 2 mS; GL = 1 mS

f = 800 MHz; GS = 3.3 mS; GL = 1 mS

f = 11 MHz; GS = 20 mS; BS = 0 S

f = 400 MHz; YS = YS(opt)

f = 800 MHz; YS = YS(opt)

input level for k = 1 %; fw = 50 MHz;

funw = 60 MHz

at 0 dB AGC

28 33

- 2.0

- 3.4

- 0.85

- 20

33 37

30 34

29 33

-5

- 1.3

- 1.4

[2]

90 -

at 10 dB AGC

- 88

at 20 dB AGC

- 94

at 40 dB AGC

100 103

Max Unit

43 mS

2.5 pF

- pF

- pF

- fF

41 dB

38 dB

37 dB

- dB

1.9 dB

2.1 dB

- dBV

- dBV

- dBV

- dBV

[1] For the MOSFET not in use: VG1-S(A) = 0 V; VDS(A) = 0 V.

[2] Measured in Figure 34 test circuit.

BF1208

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 2 — 7 September 2011

© NXP B.V. 2011. All rights reserved.

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