BF1208 データシートの表示（PDF） - NXP Semiconductors.
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BF1208 Datasheet PDF : 23 Pages
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NXP Semiconductors
BF1208
Dual N-channel dual gate MOSFET
1.4 Quick reference data
Table 1. Quick reference data
Per MOSFET unless otherwise specified.
Symbol Parameter
Conditions
VDS
ID
Ptot
yfs
Ciss(G1)
drain-source voltage (DC)
drain current (DC)
total power dissipation
forward transfer admittance
input capacitance at gate1
Tsp 109 C
f = 1 MHz
amplifier A; ID = 19 mA
amplifier B; ID = 13 mA
f = 1 MHz
amplifier A
amplifier B
Crss
reverse transfer capacitance f = 1 MHz
NF
noise figure
amplifier A; f = 400 MHz
amplifier B; f = 800 MHz
Xmod cross-modulation
input level for k = 1 % at
40 dB AGC
amplifier A
amplifier B
Tj
junction temperature
[1] Tsp is the temperature at the soldering point of the source lead.
Min Typ Max Unit
- - 6V
- - 30 mA
[1] -
-
180 mW
26 31 41 mS
28 33 43 mS
- 2.2 2.7 pF
- 2.0 2.5 pF
- 20 - fF
- 1.3 1.9 dB
- 1.4 2.1 dB
100 105 - dBV
100 103 - dBV
- - 150 C
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Discrete pinning
Description
gate1 (AMP A)
gate2
gate1 (AMP B)
drain (AMP B)
source
drain (AMP A)
Simplified outline Symbol
654
AMP A
G1A
DA
G2
S
123
G1B
DB
AMP B
sym089
BF1208
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 7 September 2011
© NXP B.V. 2011. All rights reserved.
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