BF1218 データシートの表示（PDF） - NXP Semiconductors.
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BF1218 Datasheet PDF : 23 Pages
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NXP Semiconductors
BF1218
Dual N-channel dual gate MOSFET
50
IG1
(μA)
40
30
20
10
001aag369
(1)
(2)
(3)
(4)
(5)
120
Vunw
(dBμV)
110
100
90
001aag370
0
0
2
4
6
VG2-S (V)
(1) VGG = 5.0 V.
(2) VGG = 4.5 V.
(3) VGG = 4.0 V.
(4) VGG = 3.5 V.
(5) VGG = 3.0 V.
VDS(B) = 5 V; VDS(A) = VG1-S(A) = 0 V; Tj = 25 C;
RG1 = 86 k (connected to VGG); see Figure 3.
Fig 25. Amplifier B: gate1 current as a function of
gate2 voltage; typical values
0
gain
reduction
(dB)
10
20
30
40
001aag371
80
0
20
40
60
gain reduction (dB)
VDS(B) = 5 V; VGG = 5 V; VDS(A) = VG1-S(A) = 0 V;
RG1 = 86 k (connected to VGG); fw = 50 MHz;
funw = 60 MHz; Tamb = 25 C; see Figure 34.
Fig 26. Amplifier B: unwanted voltage
for 1 % cross modulation as a function of gain
reduction; typical values
24
ID
(mA)
18
001aag372
12
6
50
0
1
2
3
4
VAGC (V)
VDS(B) = 5 V; VGG = 5 V; VDS(A) = VG1-S(A) = 0 V;
RG1 = 86 k (connected to VGG); f = 50 MHz;
Tamb = 25 C; see Figure 34.
Fig 27. Amplifier B: gain reduction as a function of
AGC voltage; typical values
0
0
20
40
60
gain reduction (dB)
VDS(B) = 5 V; VGG = 5 V; VDS(A) = VG1-S(A) = 0 V;
RG1 = 86 k (connected to VGG); f = 50 MHz;
Tamb = 25 C; see Figure 34.
Fig 28. Amplifier B: drain current as a function of gain
reduction; typical values
BF1218_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 14 April 2010
© NXP B.V. 2010. All rights reserved.
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