BF1218 データシートの表示（PDF） - NXP Semiconductors.
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BF1218 Datasheet PDF : 23 Pages
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NXP Semiconductors
BF1218
Dual N-channel dual gate MOSFET
8.2.2 Scattering parameters for amplifier B
Table 12. Scattering parameters for amplifier B
VDS(B) = 5 V; VG2-S = 4 V; ID(B) = 15 mA; VDS(A) = 0 V; VG1-S(A) = 0 V; Tamb = 25 C; typical values.
f (MHz) s11
s21
s12
s22
Magnitude Angle
(ratio)
(degree)
Magnitude Angle
(ratio)
(degree)
Magnitude Angle
(ratio)
(degree)
Magnitude
(ratio)
40
0.9841
4.20
2.9772
175.44
0.0005
106.03
0.9923
100
0.9799
7.68
2.9694
171.40
0.0011
88.52
0.9927
200
0.9775
15.24
2.9472
162.86
0.0023
87.60
0.9914
300
0.9706
22.70
2.9147
154.41
0.0034
85.98
0.9902
400
0.9632
30.08
2.8754
146.10
0.0046
85.09
0.9888
500
0.9515
37.46
2.8213
137.77
0.0056
84.03
0.9870
600
0.9377
44.80
2.7560
129.44
0.0065
83.30
0.9839
700
0.9229
52.10
2.6865
121.24
0.0075
82.99
0.9810
800
0.9062
59.33
2.6119
113.09
0.0084
82.08
0.9777
900
0.8864
66.35
2.5318
105.04
0.0091
81.36
0.9754
1000
0.8650
73.21
2.4437
97.11
0.0098
80.34
0.9714
Angle
(degree)
1.40
2.88
5.77
8.61
11.43
14.26
17.16
20.05
22.93
25.77
28.64
8.2.3 Noise data for amplifier B
Table 13. Noise data for amplifier B
VDS(B) = 5 V; VG2-S = 4 V; ID(B) = 15 mA; VDS(A) = 0 V; VG1-S(A) = 0 V; Tamb = 25 C; typical values;
unless otherwise specified.
f (MHz)
NFmin (dB)
opt
rn ()
(ratio)
(degree)
400
1.1
0.72
22.83
0.66
800
1.4
0.68
46.42
0.64
BF1218_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 14 April 2010
© NXP B.V. 2010. All rights reserved.
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