BF494 データシートの表示（PDF） - Philips Electronics
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BF494 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN medium frequency transistors
Product specification
BF494; BF495
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
BF494
BF494B
BF495
BF495B
VBE
base-emitter voltage
Cre
feedback capacitance
fT
transition frequency
CONDITIONS
IE = 0; VCB = 20 V
IE = 0; VCB = 20 V; Tamb = 150 °C
IC = 0; VEB = 4 V
IC = 1 mA; VCE = 10 V
IC = 1 mA; VCE = 10 V
IC = 0; VCB = 10 V; f = 1 MHz
IC = 1 mA; VCE = 10 V; f = 100 MHz
MIN.
−
−
−
−
−
−
−65
−
−65
MAX.
30
20
5
30
30
300
+150
150
+150
UNIT
V
V
V
mA
mA
mW
°C
°C
°C
VALUE
420
UNIT
K/W
MIN.
−
−
−
MAX.
100
4
100
UNIT
nA
µA
nA
67
220
100
220
35
125
100
125
650
740
mV
−
1
pF
120
−
MHz
1997 Jul 08
3
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