BF824W データシートの表示（PDF） - Philips Electronics
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BF824W Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP medium frequency transistor
Product specification
BF824W
FEATURES
• Low current (max. 25 mA)
• Low voltage (max. 30 V).
APPLICATIONS
• RF stages in FM front-ends in common base
configuration.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
PNP medium frequency transistor in a SOT323 plastic
package.
MARKING
TYPE NUMBER
BF824W
MARKING CODE(1)
F8∗
Note
1. ∗ = - : Made in Hong Kong.
∗ = t : Made in Malaysia.
handbook, halfpage
3
3
1
1
Top view
2
2
MAM048
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−65
−
−65
MAX.
−30
−30
−4
−25
−25
200
+150
150
+150
UNIT
V
V
V
mA
mA
mW
°C
°C
°C
1999 Apr 15
2
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