BF861C データシートの表示（PDF） - Philips Electronics

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BF861C

N-channel junction FETs

Philips Electronics 

Philips Semiconductors

N-channel junction FETs

Product specification

BF861A; BF861B; BF861C

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

VDS

VGSO

VDGO

IG

Ptot

Tstg

Tj

PARAMETER

drain-source voltage (DC)

gate-source voltage

drain-gate voltage (DC)

forward gate current (DC)

total power dissipation

storage temperature

operating junction temperature

CONDITIONS

MIN.

−

open drain

−

open source

−

−

up to Tamb = 25 °C; note 1 −

−65

−

Note

1. Device mounted on an FR4 printed-circuit board.

MAX.

25

25

25

10

250

+150

150

UNIT

V

V

V

mA

mW

°C

°C

300

Ptot

(mW)

200

MRC166

100

00

50

100

Tamb

(oC) 150

Fig.2 Power derating curve.

1997 Sep 04

3

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