BF775(2000) データシートの表示（PDF） - Infineon Technologies

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BF775
(Rev.:2000)

NPN Silicon RF Transistor

Infineon Technologies 

Electrical Characteristics

Parameter

Characteristics

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

Collector-emitter cutoff current

VCE = 20 V, VBE = 0

Collector -base cutoff current

VCB = 10 V, IE = 0

Emitter-base cutoff current

VEB = 2.5 V, IC = 0

DC current gain

IC = 10 mA, VCE = 8 V

BF 775

Symbol

Values

Unit

min. typ. max.

V(BR)CEO 15

-

-V

ICES

-

-

10 µA

ICBO

-

-

100 nA

IEBO

-

-

100 µA

hFE

40 100 200 -

2

Nov-30-2000

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