BF998(2007) データシートの表示（PDF） - Infineon Technologies

部品番号

コンポーネント説明

メーカー

BF998
(Rev.:2007)

Silicon N_Channel MOSFET Tetrode

Infineon Technologies 

BF998...

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics

Drain-source breakdown voltage

ID = 10 µA, VG1S = -4 V, VG2S = -4 V

V(BR)DS

12

-

-V

Gate 1 source breakdown voltage

±IG2S = 10 mA, VG2S = VDS = 0

Gate2 source breakdown voltage

±IG2S = 10 mA, VG2S = VDS = 0

Gate 1 source leakage current

±VG1S = 5 V, VG2S = VDS = 0

Gate 2 source leakage current

±VG2S = 5 V, VG2S = VDS = 0

Drain current

VDS = 8 V, VG1S = 0 , VG2S = 4 V

±V(BR)G1SS 8

±V(BR)G2SS 8

±IG1SS

-

±IG2SS

-

IDSS

5

-

12

-

12

-

50 nA

-

50 nA

9

15 mA

Gate 1 source pinch-off voltage

VDS = 8 V, VG2S = 4 V, ID = 20 µA

-VG1S(p)

-

0.8 2.5 V

Gate 2 source pinch-off voltage

VDS = 8 V, VG1S = 0 , ID = 20 µA

-VG2S(p)

-

0.8

2

2

2007-04-20

Share Link: